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| MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) * * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel Device Marking: MBT3946DW1T1 = 46 Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish Q1 Q2 (4) (5) MBT3946DW1T1* *Q1 PNP Q2 NPN (6) 65 4 MAXIMUM RATINGS Rating Collector -Emitter Voltage (NPN) (PNP) Collector -Base Voltage (NPN) (PNP) Emitter -Base Voltage (NPN) (PNP) Collector Current - Continuous (NPN) (PNP) Electrostatic Discharge Symbol VCEO 40 -40 VCBO 60 -40 VEBO 6.0 -5.0 IC 200 -200 ESD HBM>16000, MM>2000 V 46 = Specific Device Code d = Date Code Symbol PD RqJA TJ, Tstg Max 150 833 -55 to +150 Unit mW mAdc 46d Vdc Vdc Value Unit Vdc 1 2 3 SOT-363-6/SC-88 CASE 419B Style 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Package Dissipation (Note 1) TA = 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range ORDERING INFORMATION C/W C Device MBT3946DW1T1 Package SOT-363 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel MBT3946DW1T1G SOT-363 MBT3946DW1T2 SOT-363 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. MBT3946DW1T2G SOT-363 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 2 Publication Order Number: MBT3946DW1T1/D MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = -10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = -10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. fT (NPN) (PNP) Cobo (NPN) (PNP) Cibo (NPN) (PNP) - - 8.0 10.0 - - 4.0 4.5 pF 300 250 - - pF MHz hFE (NPN) 40 70 100 60 30 60 80 100 60 30 VCE(sat) (NPN) - - - - VBE(sat) (NPN) 0.65 - -0.65 - 0.85 0.95 -0.85 -0.95 0.2 0.3 -0.25 -0.4 Vdc - - 300 - - - - 300 - - Vdc - V(BR)CEO (NPN) (PNP) V(BR)CBO (NPN) (PNP) V(BR)EBO (NPN) (PNP) IBL (NPN) (PNP) ICEX (NPN) (PNP) - - 50 -50 - - 50 -50 nAdc 6.0 -5.0 - - nAdc 60 -40 - - Vdc 40 -40 - - Vdc Vdc Symbol Min Max Unit (PNP) (PNP) (PNP) http://onsemi.com 2 MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 kW, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) (NPN) (PNP) td tr ts tf - - - - - - - - 35 35 35 35 200 225 50 75 ns ns (NPN) (PNP) hre (NPN) (PNP) hfe (NPN) (PNP) hoe (NPN) (PNP) NF (NPN) (PNP) - - 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 mmhos 0.5 0.1 8.0 10 - Symbol hie 1.0 2.0 10 12 X 10- 4 Min Max Unit kW http://onsemi.com 3 MBT3946DW1T1 (NPN) +3 V +10.9 V 10 k 0 -0.5 V < 1 ns Cs < 4 pF* -9.1 V < 1 ns 1N916 Cs < 4 pF* 275 +3 V +10.9 V 275 10 k DUTY CYCLE = 2% 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% t1 * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo (NPN) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 (NPN) 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 4 MBT3946DW1T1 (NPN) 500 300 200 100 70 50 30 20 10 7 5 (NPN) td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 40 V 15 V 10 2.0 V 50 70 100 200 7 5 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 TIME (ns) tr @ VCC = 3.0 V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time 500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 ts = ts - 1/8 tf IB1 = IB2 t f , FALL TIME (ns) 500 300 200 Figure 6. Rise Time VCC = 40 V IB1 = IB2 IC/IB = 20 100 70 50 30 20 10 7 5 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA 14 f = 1.0 kHz 12 10 8 6 4 2 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 (NPN) 10 20 40 100 IC = 100 mA IC = 1.0 mA IC = 0.5 mA IC = 50 mA (NPN) 10 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure http://onsemi.com 5 Figure 10. Noise Figure MBT3946DW1T1 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 300 (NPN) h fe , CURRENT GAIN 200 hoe, OUTPUT ADMITTANCE (m mhos) 100 50 (NPN) 20 10 5 2 1 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 11. Current Gain 20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 (NPN) hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 10 7.0 5.0 3.0 2.0 Figure 12. Output Admittance (NPN) 2.0 1.0 0.5 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio http://onsemi.com 6 MBT3946DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 -55 C +25C (NPN) VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 (NPN) VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C) 0.5 qVC FOR VCE(sat) 0 -0.5 -55 C TO +25C -1.0 +25C TO +125C -1.5 -2.0 qVB FOR VBE(sat) -55 C TO +25C 1.0 (NPN) +25C TO +125C 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 7 MBT3946DW1T1 (PNP) 3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors t1 10.9 V 1N916 Cs < 4 pF* 10 k < 1 ns 275 3V Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 (PNP) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 (PNP) QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 21. Capacitance 500 300 200 100 70 50 30 20 10 7 5 (PNP) IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 Figure 22. Charge Data (PNP) IC/IB = 20 VCC = 40 V IB1 = IB2 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. Turn -On Time Figure 24. Fall Time http://onsemi.com 8 MBT3946DW1T1 (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 (PNP) 20 40 100 0 0.1 0.2 (PNP) 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 IC = 50 mA IC = 100 mA IC = 1.0 mA NF, NOISE FIGURE (dB) 4.0 3.0 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 0 0.1 1.0 2.0 4.0 10 f, FREQUENCY (kHz) Figure 25. Figure 26. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) (PNP) h fe , DC CURRENT GAIN 200 100 70 50 30 20 (PNP) 100 70 50 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 27. Current Gain 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 (PNP) hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 10 7.0 5.0 3.0 2.0 Figure 28. Output Admittance (PNP) 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio http://onsemi.com 9 MBT3946DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 (PNP) 0.2 +25C -55 C VCE = 1.0 V 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 31. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA TJ = 25C 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 32. Collector Saturation Region TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 qVB FOR VBE(sat) (PNP) +25C TO +125C -55 C TO +25C qVC FOR VCE(sat) +25C TO +125C -55 C TO +25C 0.6 (PNP) 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 33. "ON" Voltages Figure 34. Temperature Coefficients http://onsemi.com 10 MBT3946DW1T1 PACKAGE DIMENSIONS SOT-363-6/SC-88 CASE 419B-02 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 A G 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) N M B M J C STYLE 1: PIN 1. 2. 3. 4. 5. 6. H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches Figure 35. SC-88/SC70-6 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 MBT3946DW1T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 12 MBT3946DW1T1/D |
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